By Shai Bonen, Lucy Wu, Suyash Pati Tripathi, Hao Yun (Alex) Hsu, Alireza Zandieh, Ming Jia (Mecca) Gong, Utku Alakusu, Sadegh Dadash, and Sorin P. Voinigescu

This presentation will discuss the challenges in the physical implementation and design of future quantum processors fabricated in commercial CMOS technologies in which both the quantum dot qubits and the control/readout electronics are monolithically integrated on the same die. Monolithic solutions offer advantages in interconnect density, enabling the pathway to millions of qubits in one processor, if we can overcome the challenges: manufacturing quantum dots and circuits together, circuit heat dissipation, “high temperature” (~2 K) qubit operation using millimetre-wave excitation frequencies (30 – 300 GHz), and layout miniaturization to fit qubit array pitch. Experimental device characterization and design methodology for quantum processor components in a commercial 22nm FDSOI CMOS process will be presented.

Bio: Shai Bonen is a Ph.D. Candidate in the Electrical and Computer Engineering Department at the University of Toronto, studying under the supervision of Professor Sorin P. Voinigescu. His work includes the design and characterization of FDSOI and FinFET CMOS and SiGe HBT BiCMOS transistors and circuits from DC to 300 GHz and from 2 K to 400 K for application to quantum computing and automotive radar. He received his M.A.Sc. in electrical engineering and B.A.Sc. in applied science in engineering science majoring in electrical and computer engineering from the University of Toronto in 2020 and 2017 respectively.